Xiao Renshaw Wang
School of Physical and Mathematical Sciences (SPMS) & School Electrical and Electronic Engineering (EEE), Nanyang Technological University, Singapore
Abstract
When artificially integrating the naturally incompatible atomic structures, crystallographic orientations and physical functionalities, the interplays at the interfaces induce unexpected functionalities, which are beneficial to future electronics in the aspect of manipulation, functionalization and utilization. However, realizing unrestricted heterogeneous integration and their electronic applications is extremely challenging, because of the technical restrictions of fabrication and the unwanted reduction of interface quality. The challenges are particularly severe in the heterogeneous integration of oxides with either other emerging materials or existing Si technologies, because of the incompatible growth dynamics and large lattice mismatch.
In this talk, I will discuss our recent exploration of functional electronic devices based on the heterogeneous integration of perovskite oxide films. First, I will provide a brief overview of the emergent functionalities in oxide heterostructures and approaches to heterogeneously integrating the perovskite oxides. Then, I will discuss experimental results related to electronic applications based on the heterogeneously integrated structures consisting of perovskite oxide membranes and various materials, namely energy-efficient transistors and multifunctional devices. A summary will be provided at the end.
Related studies:
[1] Imaging and control of ferromagnetism in LaMnO3/SrTiO3 heterostructures. Science 349, 716-719 (2015).
[2] Van der Waals integration of high-κ perovskite oxides and two-dimensional semiconductors. Nature Electronics5, 233-240 (2022).
[3] Multifunctional magnetic oxide-MoS2 heterostructures on silicon.A dvanced Materials35, 2302620 (2023).
[4] Two-dimensional layered materials meet perovskite oxides: A combination for high-performance electronic devices, ACS nano17, 11, 9748 (2023)
[5] Emergent Freestanding Complex Oxide Membranes for Multifunctional Applications, Nano Letters 25, 35, 13184-13190 (2025)
[6] Emergent Freestanding Complex Oxide Membranes for Multifunctional Applications, Advanced Materialsaccepted (2026).
[7] Efficient and Robust p-type transistor based on ultra-wide bandgap semiconductor,A CS nanoaccepted (2026).
Speaker's Introduction
Dr. Xiao WANG (Renshaw, 王骁) is an associate professor at the School of Physical and Mathematical Sciences and the School of Electrical and Electronic Engineering at Nanyang Technological University (NTU) in Singapore. He earned his Ph.D. from the National University of Singapore (NUS) and conducted postdoctoral research at the University of Twente (Netherlands), the Massachusetts Institute of Technology (MIT) in the USA, and at SMART in Singapore.
Dr. Wang’s research focuses on low-dimensional physics and devices. He has received various awards, including Nanyang Assistant Professorship from NTU, Singapore, NWO Rubicon Fellowship from the Netherlands, as well as Chinese government award for outstanding self-financed student abroad.He has published a number of scientific papers in peer reviewed journals, includingScienceandNature Electronics. His group website is www.RenshawLab.com.
